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| (R) ISO 9001 Registered Process C1227 HV BiCMOS 1.2m 30V Double Metal - Double Poly Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSP Punch Through Voltage ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor Threshold Voltage VTN Body Factor N Conduction Factor N Effective Channel Length LeffN Width Encroachment WN Punch Through Voltage BVDSSN Poly Field Threshold Voltage VTFPN Symbol P-Channel High Voltage Transistor Threshold Voltage HVTP Punch Through Voltage HVBVDSSP ON Resistance HVPR0N P-Channel Low Voltage Transistor Threshold Voltage VTP Body Factor P Conduction Factor P Effective Channel Length LeffP Width Encroachment WP Punch Through Voltage BVDSSP Poly Field Threshold Voltage VTFP(P) Capacitance Gate Oxide Metal-1 to Poly1 Metal-2 to Metal-1 Vertical NPN Transistor Beta Early Voltage Cut-Off Frequency Symbol COX CM1P CMM Symbol hFE VA f Minimum 0.7 36 Typical 0.9 1.4 VGS = 5V VDS = 30V 0.4 0.50 64.0 1.20 8 10 Minimum -0.7 -36 0.6 0.65 75.0 1.35 0.45 18 Typical -0.9 11.0 Maximum -1.1 0.8 0.80 86.0 1.50 T=25oC Unless otherwise noted Maximum Unit Comments 1.1 V V mcm2 V @VGS = 5V VDS = 0.1V V V1/2 A/V 2 m m V V Unit V V mcm2 V V1/2 A/V 2 m m V V Unit fF/m2 fF/m2 fF/m2 Unit V GHz 100x1.4m 100x1.4m 100x100m 100x1.4m Per side Comments @VGS = -5V @VDS = -0.1V 100x1.4m 100x1.4m 100x100m 100x1.4m Per side -0.8 0.35 20.0 1.35 -8 -10 Minimum 1.338 0.040 0.043 Minimum 50 -0.6 0.50 25.0 1.50 0.40 -18 Typical 1.439 0.046 0.050 Typical 140 34 1.89 -0.4 0.65 30.0 1.65 Maximum 1.569 0.052 0.057 Maximum 240 Comments Comments 4.5x4.5m (c) IMP, Inc. 71 Process C1227 Physical Characteristics Diffusion & Thin Films Symbol Starting Material p<100> N-well(f) Well(field)Sheet Resistance N+ N+ Sheet Resistance N+ Junction Depth xjN+ P+ P+ Sheet Resistance P+ Junction Depth xjP+ Base Resistance RSHB_RB High-Voltage Gate Oxide HTGOX Gate Oxide Thickness TGOX Interpoly Oxide Thickness IPOX POLY1 Gate Poly Sheet Resistance Poly2 Resistivity RSH_PL P M1 Metal-1 Sheet Resistance M2 Metal-2 Sheet Resistance Passivation Thickness TPASS Minimum 1.5 20.0 50.0 1.33 Typical 2.1 35.0 0.4 75.0 0.4 1.66 22 22 42 22.0 2 45.0 25.0 200+900 Maximum 2.7 50.0 100.0 2.00 Unit K/ / m / m K/sq nm nm nm / k/ m/ m/ nm Comments n-well 33.6 15.0 1.5 35.0 19.0 50.4 30.0 2.5 65.0 35.0 oxide+nitride Layout Rules Min Channel Width Min Spacing, Active Region, 5V Poly1 Width/Space Poly2 Width/Space Contact Width/Space Via Width/Space Metal-1 Width/Space Metal-2 Width/Space Gate Poly Width/Space N+/P+ Width/Space 4.0m 2.0m 1.4/2.0m 3.0/2.0m 1.4x1.4m 1.4/1.6m 2.6/1.6m 2.6/1.6m 1.5/2.0m 2.5/2.0m Diffusion Overlap of Contact Poly Overlap of Contact Metal-1 Overlap of Contact Contact to Poly Space Minimum Pad Opening Metal-1 Overlap of Via Metal-2 Overlap of Via Minimum Pad Opening Minimum Pad to Pad Spacing Minimum Pad Pitch 1.0m 1.0m 1.5m 1.5m 65x65m 1.0m 1.0m 65x65m 5.0m 80m 72 C1227-4-98 |
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